Type-I laser diodes:
Brolis Semiconductors develops mid-infrared laser diodes based on type-I optical transition on GaSb technology platform. Type-I optical transition results when an electron and a hole recombines across the effective bandgap of the quantum well in the active semiconductor material.
Type-I transition advantages:
High gain
Low operating voltage
Wavelength reproducibility
CW operation at RT
Laser diodes based on type-I transition combine advantages of highest optical gain and very low voltage drop ( i.e. Brolis laser diodes have operating voltages < 1 V compared to ~15 V quantum cascade lasers QCLs and ~3-5 V interband cascade lasers ICLs) resulting in extremely low input powers and uncooled room-temperature operation in continuous-wave mode.
For more information regarding our standard products see:
Single-transversal mode Fabry-Perot lasers
| Wavelength (μm) | Operation temperature | Operation mode | Output power (mW/facet)* | Availability | Data sheet |
| 2.1 | RT | CW | 10-15 | In-stock | info |
| 2.73 | RT | CW | 7 | In-stock | info |
| 2.72-3.0 | RT | CW | 5-7 | On demand | info |
| 3.0-3.4 | RT | CW | 5 | On demand | info |
| 3.4-3.75 | RT | Pulsed | 5 | On demand | info |
* at 500 mA drive current for a 2 mm x 4 μm wide emitter; CW – continuous wave; RT – room temperature.
For more information regarding our products, contact us at oplan@263.net
Custom wavelengths and powers are available on-request!
