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2um窄线宽激光器
- 品牌:上海屹持光电
- 型号: EP2000-DM-B
- 产地:闵行区
- 供应商报价: 面议
- 屹持科学仪器香港有限公司 更新时间:2024-03-27 10:28:45
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入驻年限第6年
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- 详细介绍
Laser Diode Discrete ModeEP2000-DM-B Series
The EP2000-DM-B laser diode module is a cost effective, highly coherent laser source. The patented discrete mode (DFB-like) ridge waveguide technology and epistructure design is used to deliver an InP-based strained quantum-well laser diode source emitting at a wavelength of 2.0µm with high SMSR. The Discrete Mode laser diode chip is packaged in an industry standard, hermetically sealed 14 pin butterfly package with integrated optical isolator, thermo-electric cooler (TEC), monitor photodiode and thermistor.
Key Features
Applications
Excellent reliability
High performance gas sensing
Mode-Hop free tuning >2nm
Seed Laser
Integrated optical isolator
Narrow linewidth <2MHz
Optical and electrical characteristics: (T = 25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
LASER DIODE
Output Power in Fibre
Pf
1.5
1.75
2
mW
Centre Wavelength
λcen
1950
2001
2150
nm
Threshold Current
Ith
-
20
40
mA
Operating Current
Iop
-
70
120
mA
Forward Voltage
Vf
-
1.3
1.6
V
Side Mode Suppression Ratio
SMSR
30
40
-
dB
Temperature Tuning Coefficient
-
0.1
-
nm/K
Current Tuning Coefficient
-
0.01
-
nm/mA
Quantum Efficiency
η
0.02
0.03
-
mW/mA
Optical Isolation
ISO
40
-
dB
MONITOR DIODE*
Monitor Photo Current
Im
0.2
0.4
0.8
mA
Monitor Operating Voltage
Vm
-
-
5.5
V
Monitor Dark Current (at 5V VDR)
Imd
-
-
< 0.2
µA
Absolute Maximum Ratings (Tsub= 25°C)
Parameter
Symbol
Ratings
Units
Laser diode reverse voltage
VR
2
V
Laser diode forward current
IF
120
mA
Photodiode reverse voltage
VDR
20
V
Peltier current
IP
1.2
A
Operating case temperature
Tcase
-20 to 65
°C
Storage temperature
Tstg
-40 to 85
°C
上海屹持光电技术有限公司
马·先生156·1899·6225
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