Thorlabs 热敏功率探头,表面吸收,0.19 - 20 µm,100 µW - 5 W,Ø10 mm
InGaAs蝶形平衡探测器
Si光电探测器
InGaAs超低噪探测器
InGaAs蝶形光电探测器
光电倍增管,用于多通道探测
PMTSS2:双通道PMT,带可更换的荧光滤光片立方插件
PMTSS2-SCM:附加的单通道PMT,带燕尾,用于机械和光学对准
兼容SMA905光纤耦合和自由空间光学输入
额外的滤光片立方插件单独提供

PMTSS2模块的输入端口有带SMA905接头的滤光片准直组件,可以接收耦合到多模光纤跳线或光纤束的信号。该模块还包含纤芯Ø910 µm、数值孔径0.22、SMA905端口的光纤跳线,用于250 - 1200 nm(裸纤型号FG910UEC)。如有需要,可以旋出准直组件,以便让模块接收自由空间信号。旋出该组件会露出SM1内螺纹,兼容我们的Ø1英寸透镜套筒。PMTSS2-SCM附加模块不包含光纤准直组件,但是兼容PMTSS2内附的准直组件。
为了将PMTSS2-SCM模块添加到已有的PMTSS2装置,该模块的外壳包含互锁燕尾,用于机械和光学对准。安装程序如右边视频所示,需要5/64英寸(2 mm)球头起子或六角扳手。如果使用内附的光纤输入,建议*多八个通道,以防光束发散造成信号检测失效。如需使用自由空间信号,注意,每个光电阴极的有源区为3.7 mm × 13.0 mm (H × V)。
PMT通过BNC接头提供输出电流。它没有跨阻放大器;Thorlabs的TIA60跨阻放大器单独提供。每个PMT需要单独的控制电压,可以通过M8 x 1母接头提供。实现偏压控制需要*大为+1.20 V的可变电压源(详情请看曲线标签)。PMTSS2模块发货带两个有引线的M8 x 1公接头,用户可以将其连接到合适的低噪声电压源;PMTSS2-SCM附加模块发货时带有一个接头。

每个模块都包含1/4英寸(M6)沉头孔槽,用于安装到光学平台或工作台。考虑到这些模块的重量,我们只建议直接安装到平台。使用5/64英寸(2 mm)球头起子或六角扳手拧松固定螺丝,可以将PMT与其他部件拆开。
这些PMT模块不包含电源。利用内附M8 x 1公接头的引线,可以连接到+15 VDC、电流限制为7 mA的电源。
规格
独立碱式PMT
| Item # | PMM01 | PMM02 | PMTSS | PMT1001(/M) | PMT1002 |
|---|---|---|---|---|---|
| Detector Specifications | |||||
| Wavelength Range | 280 - 630 nm | 300 - 800 nm | 185 - 900 nm | 230 - 920 nm | |
| Peak Wavelength (λp) | 400 nm | 420 nm | 450 nm | 630 nm | |
| Radiant Sensitivity at λpa (Typ.) | 80 mA/W | 51 mA/W | 105 mA/W | 78 mA/W | |
| Quantum Efficiency at λpa (Calculated from Radiant Sensitivity) | 25% | 15% | >28% | >15% | |
| PMT Gain (Max) | 7.1 x 106 | 5.1 x 105 | >1.0 x 107 See Graphs Tab for PMT Gain vs. Control Voltage | >3.0 × 106 See Graphs Tab for PMT Gain vs. Control Voltage | |
| HV Control Voltage (Max) | 0 V to +1.8 Vb | 0 V to +1.25 Vb | +0.25 V to +1.00 V (Recommended) +0.25 V to +1.20 V (Maxc) | +0.50 V to +1.10 V Software Controlled | |
| Control Voltage Connector | 2.5 mm Mono Jack | M8 x 1 Power Connector | USB Mini | ||
| PMT Voltage | 0 V to -1800 Vb,d | 0 V to -1250 Vb,d | +250 V to +1000 V (Recommended) +250 V to +1200 V (Maxc) | +500 V to +1100 V | |
| Photocathode Active Area | Ø22 mm | Ø21 mm | 3.7 mm x 13.0 mm (H x V) | Ø8 mm | |
| Dark Currente | 0.3 - 3 nA (at 20 °C) | 3 nA (Typ.) 20 nA (Max) (After 30-Minute Storage in Darkness) | 2 nA (Typ.) 10 nA (Max) | 10 nA (Typ.) 100 nA (Max) | |
| Dark Count Ratee | 100 s-1 (at 20 °C) | - | - | - | |
| Warm-Up Time Before Applying Control Voltagee | < 10 s | 30 to 60 Minutes | 30 to 60 Minutes | ||
| Anode Currentf | 100 µA (Max)g | 10 µAh | 100 µAh | ||
| Rise and Fall Time | 15 µs | 1.4 ns | 0.57 ns (Rise)i | ||
| Photocathode Type | Bialkali | Multialkali | Multialkali | Multialkali | |
| Photocathode Geometry | Head On | Side On | Head On | ||
| Window | Borosilicate, Plano-Concave (n = 1.49) | UV-Transmitting Glass (n = 1.48) | Borosilicate, Flat Window (n = 1.487) | ||
| Transimpedance Amplifier Specifications | |||||
| Transimpedance Gain | High Z: 1 x 106 V/A 50 Ω: 5 x 105 V/A | No Amplifier Included | 11000 +1000 / -500 V/A | ||
| Amplifier Bandwidth (at 6 dB)j | DC to 20 kHz | N/A | Software Configurable DC to 80 MHz, 2.5 MHz, or 250 kHz | ||
| Amplifier Noise (Typ.) | 2 mV (RMS) | N/A | 5.8 pA / √Hz (Total Input Noise at DC to 80 MHz Bandwidth) 6.5 pA / √Hz (Input Current Noise at 1 MHz, Cin = 4 pF) | ||
| Amplifier Offset (Typ.) | 1 mV | N/A | ±103 µV / °Ck | ||
| Output Signall | |||||
| Output Voltage | 0 - 10 V (High Z) 0 - 5 V (50 Ω) | N/A | ±1.5 V (50 Ω) | ||
| Output Current | N/A | 10 µA (Max) | N/A | ||
| Connector | SMA | BNC | SMA | ||
| Physical Specifications | |||||
| Module Dimensions | 3.65" x 1.60" x 2.46" (92.8 mm x 40.6 mm x 62.5 mm) | 5.20" x 1.26" x 2.50" (132.0 x 32.1 x 63.5 mm) | 3.43” x 1.60” x 2.10” (87.2 mm x 40.6 mm x 53.5 mm) | 3.32" x 1.35" x 1.95" (84.4 mm x 34.3 mm x 49.6 mm) | |
| Power Input | +12 V Pin: 40 mA Max, +12 V to +15 V -12 V Pin: 10 mA Max, -12 V to -15 V | 15 VDC, 7 mA Max | 5 VDC +4.5 V to +5.5 V 350 mA Typ., 500 mA Max | ||
| Included Power Supply | ±12 VDC (100/120/230 VAC, 50 or 60 Hz, Switchable)m | - | - | ||
| Operating Temperature | 5 to 55 °C | 15 to 40 °C | 5 to 50 °C | ||
| Storage Temperature | -40 to 55 °C | -20 to 50 °C | -20 to 50 °C | ||
| Module Weight | 200 g (0.44 lbs) | 200 g (0.44 lbs) | 0.3 kg (0.66 lbs) | 300 g (0.66 lbs) | |
| Mounting Options | |||||
| Internal SM1 Threads | (In Front of Window) | (In Front of Window) | - | (In Front of Window) | - |
| Internal C-Mount Threads | - | - | (In Front of Window) | - | (In Front of Window) |
| Mounting Holes | Three 8-32 Taps (8-32 to M4 Adapter Included) | Three 8-32 Taps (8-32 to M4 Adapter Included) | - | 1/4"-20 (M6) Tap | - |
| 30 mm Cage System | (Four 4-40 Taps) | (Four 4-40 Taps) | - | (Four 4-40 Taps) | - |
辐射灵敏度(RS)与量子效率(QE)的换算关系如下公式:

不超过PMT的额定增益。
虽然PMT可能在+1.20 V的*大控制电压下工作,但超过推荐的控制电压可能会缩短PMT的工作寿命。
这是根据公式计算得出的值:PMT电压 = -1000 × HV控制电压。
PMT在黑暗环境打开,指定预热时间内不施加控制电压而且没有入射信号时,暗电流比和暗计数规格有效。
PMTbi须屏蔽环境光,且bi须仔细选择控制电压,避免意外产生的信号尖峰超过阳极电流。超过*大阳极电流会给PMT造成无法修fu的损伤。
超过*大阳极电流会永jiu损坏PMT。
超过此值,输出信号表现出非线性行为。
下降时间不适用于这些PMT。
带宽随着输出信号幅度的增大而减小。
直流电压漂移。
输出信号应保持在*大值以下,以防饱和。可以利用窗口前的SM1或C-Mount螺纹安装ND滤光片,衰减射入PMT的光信号。
更换用的电源在下方提供。
所有规格在25 °C有xiao,除非另有说明。
GaAsP PMT
| Item # | PMT2101(/M) | PMT2102 |
|---|---|---|
| Detector Specifications | ||
| Wavelength Range | 300 - 720 nm | |
| Peak Wavelength (λp) | 580 nm | |
| Radiant Sensitivitya (Typ.) | 176 mA/W at 550 nm | |
| 108 mA/W at 420 nm | ||
| Quantum Efficiencya (Calculated from Radiant Sensitivity) | 39% at 550 nm (Typical)b | |
| 32% at 420 nm (Typical)b | ||
| PMT Gain (Max) | >1.0 × 106 | |
| Control Voltage | +0.50 V to +0.80 V (Recommended) +0.5 V to +1.0 V (Maxc) Software Controlled | |
| Control Voltage Connector | USB Mini | |
| PMT Voltage | +500 V to +800 V (Recommended) +500 V to +1000 V (Max) | |
| Photocathode Active Area | Ø5 mm | |
| Dark Count Rated, e | 6000 s-1 (at 25 °C, Typical) 18000 s-1 (at 25 °C, Maximum) | |
| Warm-Up Time Before Applying Control Voltagee | 30 to 60 minutes (at 25 °C) | |
| Anode Currentf | 500 µA (Max) | |
| Rise Timeg | 1.00 ns | |
| Photocathode Type | GaAsP | |
| Photocathode Geometry | Head On | |
| Window | Borosilicate, Flat Window | |
| Transimpedance Amplifier Specifications | ||
| Transimpedance Gain | 11000 +1000 / -500 V/A | |
| Amplifier Bandwidth (at 6 dB)h,i | Software Configurable DC to 80 MHz, 2.5 MHz, or 250 kHz | |
| Amplifier Noisei (Typ.) | 5.8 pA / √Hz (Total Input Noise at DC to 80 MHz Bandwidth) 6.5 pA / √Hz (Input Current Noise at 1 MHz, Cin = 4 pF) | |
| Amplifier DC Offset Drift (Typ.) | ±103 µV / °C | |
| Maximum Inputj | ±500 μA | |
| Output Signalk | ||
| Output Voltage | ±1.5 V (50 Ω) | |
| Output Current | N/A | |
| Connector | SMA | |
| Physical Specifications | ||
| Module Dimensions | 3.43” × 1.60” × 2.10” (87.2 × 40.6 × 53.5 mm) | 3.32" × 1.35" × 1.95" (84.4 × 34.3 × 49.6 mm |
| Power Input | 5 VDC (+4.5 V to +5.5 V) 350 mA Typ., 500 mA Max | |
| Operating Temperature | 5 to 35 °C | |
| Storage Temperature | -20 to 50 °C | |
| Module Weight | 300 g (0.66 lb) | |
| Mounting Options | ||
| Internal SM1 Threads | (In Front of Window) | - |
| Internal C-Mount Threads | - | (In Front of Window) |
| Mounting Holes | 1/4"-20 (M6) Tap | - |
| 30 mm Cage System | (Four 4-40 Taps) | - |
辐射灵敏度(RS)与量子效率(QE)的换算关系如下公式:

不同PMT的量子效率可能不同。
虽然PMT可能在+1.0 V的*大控制电压下工作,但超过推荐的控制电压可能会缩短PMT的工作寿命。
放在暗室30分钟后测量。
PMT在黑暗环境打开,指定预热时间内不施加控制电压而且没有入射信号时,暗计数规格you效。
PMT必xu屏蔽环境光,且必xu仔细选择控制电压,避免意外产生的信号尖峰超过阳极电流。超过*大阳极电流会给PMT造成无法修fu的损伤。
在+0.8 V控制电压和25 °C环境下测量。
带宽随着输出信号幅度的增加而减小。
放大器带宽与等效输入电流噪声都为典型值,取决于源电容。为了达到*佳带宽和噪声性能,可在放大器的输入端使用较短的电线,以减小电容。
超过这个规格工作很可能永jiu性损坏放大器。
输出信号应保持在*大值以下,以防饱和。窗口前可以利用SM1或C-Mount螺纹安装ND滤光片,衰减射入PMT的光信号。
所有规格在25 °C有xiao,除非另有说明。
多通道PMT
| Item # | PMTSS2 | PMTSS2-SCM |
|---|---|---|
| Detector Specifications | ||
| Wavelength Range | 185 - 900 nm | |
| Peak Wavelength (λp) | 450 nm | |
| Radiant Sensitivity at λpa (Typ.) | 105 mA/W | |
| Quantum Efficiency at λpa (Calculated from Radiant Sensitivity) | >28% | |
| PMT Gain (Max) | >1.0 × 107 See Graphs Tab for PMT Gain vs. Control Voltage | |
| Control Voltage | +0.25 V to +1.00 V (Recommended) +0.25 V to +1.20 V (Maxb) | |
| Control Voltage Connector | M8 x 1 Power Connector | |
| PMT Voltage | +250 V to +1000 V (Recommended) +250 V to +1200 V (Maxb) | |
| Photocathode Active Area | 3.7 mm × 13.0 mm (H × V) | |
| Dark Currentc | 2 nA (Typ.) 10 nA (Max) | |
| Dark Count Ratec | - | |
| Warm-Up Time Before Applying Control Voltagec | 30 to 60 Minutes | |
| Anode Currentd | 10 µA (Max) | |
| Rise and Fall Time | 1.4 ns | |
| Photocathode Type | Multialkali | |
| Photocathode Geometry | Side On | |
| Window | UV-Transmitting Glass (n = 1.48) | |
| Transimpedance Amplifier Specifications | ||
| Transimpedance Gain | No Amplifier Included | |
| Amplifier Bandwidth (at 6 dB)e | N/A | |
| Amplifier Noise (Typ.) | N/A | |
| Amplifier Offset (Typ.) | N/A | |
| Output Signalf | ||
| Output Voltage | N/A | |
| Output Current | 10 µA (Max) | |
| Connector | BNC | |
| Physical Specifications | ||
| Module Dimensions | 10.18" × 8.09" × 3.40" (258.5 × 205.5 × 86.4 mm) | 8.09" × 2.43" × 3.40" (205.5 × 61.8 × 86.4 mm) |
| Power Input | 15 VDC, 7 mA Max | |
| Operating Temperature | 15 to 40 °C | |
| Storage Temperature | -20 to 50 °C | |
| Module Weight | 1.4 kg (3.08 lb) | 0.9 kg (1.98 lb) |
| Mounting Options | ||
| Internal SM1 Threads | (On Input Port andFilter Cube) | (On Input Port andFilter Cube) |
| Internal C-Mount Threads | (In Front of Windowg) | (In Front of Windowg) |
| Mounting Holes | 1/4" (M6) Counterbored Slots | 1/4" (M6) Counterbored Slots |
| 30 mm Cage System | - | - |
辐射灵敏度(RS)与量子效率(QE)的换算关系如下公式:

虽然PMT可能在+1.20 V的*大控制电压下工作,但超过推荐的控制电压可能会缩短PMT的工作寿命。
PMT在黑暗环境打开,指定预热时间内不施加控制电压而且没有入射信号时,暗电流比和暗计数规格you效。
PMT必xu屏蔽环境光,且bi须仔细选择控制电压,避免意外产生的信号尖峰超过阳极电流。超过*大阳极电流会给PMT造成无法修fu的损伤。
带宽随着输出信号幅度的增加而减小。
输出信号应保持在*大值以下,以防饱和。窗口前可以利用SM1或C-Mount螺纹安装ND滤光片,衰减射入PMT的光信号。
除非将PMT与滤光片立方体组件分离,否则C-Mount螺纹不可用。
所有规格在25 °C时you效,除非另有说明。

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