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Experiment SiO2 films with a thickness of 300 nm were grown on (100) p-Si substrates， with a resistivity of 4 W cm， using thermal oxidation at 1，000 C， for 90 min. Monte Carlo simulationcode (TRIM) was used to calculate the adequate ene... Experiment
SiO2 films with a thickness of 300 nm were grown on (100)
p-Si substrates， with a resistivity of 4 W cm， using thermal
oxidation at 1，000 C， for 90 min. Monte Carlo simulationcode (TRIM) was used to calculate the adequate energy in
order to place the maximum Ge concentration at the middle
of the SiO2 film. SiO2 matrices were implanted with Ge74+
ions at RT， with 250 keV energy， using implantation doses
of [0.5， 0.8， 1， 2， 3 and 4] · 1016 cm–2. After ion implantation，
the samples were annealed at 1，000 C for 1 h in a
forming gas atmosphere to precipitate Ge and to form the
nanocrystallites.
Raman spectra were obtained using a triple grating T-
64000 Jobin-Yvon spectrometer， with 1 cm–1 spectral
resolution. The 514 nm line of the argon laser was used to
excite the samples. All samples were measured at RT; the
laser power on the sample was 9 mW. The diameter of the
laser spot was 50 lm and the integration time was 30 min.
The resonant Raman spectra were obtained in the backscattering
configuration. The orientation of the Si substrate
is fundamental to polarize the laser light， allowing the
second-order Raman Si peak， at about 300 cm–1， to be
suppressed not masking the Raman peaks corresponding to
Ge-nc.
PL spectra were measured at RT with a 240 nm excitation
source， using a Spex Fluoromax spectrometer with a
R298 Hamamatsu photomultiplier.
Compositional analysis of the SiO2 matrix was carried
out using a DIGILAB infra-red Fourier transform spectrometer.
The system was purged with dry N2 to reduce
the infrared (IR) absorption from H2O and CO2. Transmittance
measurements were carried out within the 400–
4，000 cm–1 range at 300 K. The beam spot size was about
5 mm diameter and the resolution was 4 cm–1. In all cases
a non-processed Si substrate sample was used as a
reference.
Results and discussions
Figure 1 presents the Raman spectra of the films implanted
with various doses [0.5; 0.8; 1; 2; 3; 4] · 1016 cm–2， followed
by annealing forming-gas， (92% N2 + 8% H2) at
1，000 C， for 1 h. The position of the peak for bulk Ge was
determined at 302.4 cm–1 and this value is used to compare
with Ge-nc peaks. The Raman spectra of the implanted
samples clearly show three bands: 210–280， 304 and
430 cm–1. The first one， 210–280 cm–1， is associated with
amorphous Ge compounds. Such band was expected as the
samples have been annealed at 1，000 C， therefore above
the Ge melting temperature (938.3 C) [10]. At this temperature，
Ge precipitates as liquid droplets inside a viscous
oxide matrix. The second band was near 304 cm–1， and can
be associated with Ge-nc. This band is in good agreement
with the work reported by Wu et al. [11]. Finally， the
third band at 430 cm–1 is related to local Si–Si vibrations
[12].