使用VUV椭圆偏振光谱仪和FTIR-ATR对纳米级厚度的高k介电

Optical characterization techniques proved to be complementary to optimize highmaterials used in microelectronic applications. This note shows that the VUV wavelength range of the UVISEL Phase Modulated Ellipsometer is particularly suitable for the accurate characterization of high-K film thickness and interfaces with nanoscale dimensions as well as optical properties and bandgap. 研究级经典型椭偏仪 UVISEL