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ZnO films were deposited on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD).Annea领 treatments for asdeposited samples were performed in different atmosphere under various pressures in the same chamber just after growth.The effect of annea领 atmosphere on the electrical,structural,and optical absorption measurements.The results indicated that the electrical and structural properties of the films were highly influenced by annea领 atmosphere,which was more promounced for the films annealed in oxygen ambient. The most significant improvements for structural and electrical properties were obtained for the film annealed in oxygen under the pressure of 60 Pa.Under the optimum annea领 condition,the lowest resistivity of 0.28 cm and the highest mobility of 19.6 cm2v-1s-1were obtained.Meanwhile, the absorbance spectra turned steeper and the optical band gap red shifted back to the single-crystal value.
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