The development of anisotropic etching process for Pb,SrTiO3 PST thin films is an important
task to provide a small feature size and an accurate pattern transfer. Etching characteristics of PST
thin films were investigated using inductively coupled plasma etching system as functions of Cl2/Ar
gas mixing ratio. The PST etch rate increased with the increase of chlorine radical and ion energy
intensity. It was found that the increasing of Ar content in gas mixture lead to sufficient increasing
of etch rate. The maximum etch rate of PST film is 56.2 nm/min at Cl2 / Cl2+Ar of 0.2. It was
proposed that the sputter etching is a dominant etching mechanism while the contribution of
chemical reaction is relatively low due to low volatility of etching products.The electron temperature and plasma density were
measured by using the Langmuir probe Hiden Analytical
Ltd, ESPION.The mass and the ion energy distributions IEDs were measured
with a Hiden EQP plasma probe Hiden Analytical Ltd,
EQP 510 that consists of an electrostatic ion energy analyzer
ESA in series wi tha 高级朗缪尔探针（Langmuir Probe）
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